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october 2009 doc id 16382 rev 1 1/12 12 stw26nm60n-h n-channel 600 v, 0.135 ? , 20 a to-247 mdmesh? ii power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this series of devices implements second generation mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram note: the device meets ecopack? standards, an environmentally-friendl y grade of products commonly referred to as ?halogen-free? . see section 4: package mechanical data type v dss r ds(on) max i d stw26nm60n-h 600 v < 0.165 ? 20 a to-247 1 2 3 3# $ ' 3 table 1. device summary order codes marking package packaging stw26nm60n-h 26nm60n to-247 tube www.st.com
contents stw26nm60n-h 2/12 doc id 16382 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
stw26nm60n-h electrical ratings doc id 16382 rev 1 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 20 a i d drain current (continuous) at t c = 100 c 12.6 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 80 a p tot total dissipation at t c = 25 c 140 w derating factor 1.12 dv/dt (2) 2. i sd 20 a, di/dt 400 a/s, v dd 80% v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.89 c/w r thj-amb thermal resistance junction-ambient max 50 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not- repetitive (pulse width limited by tj max) 8.5 a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 610 mj
electrical characteristics stw26nm60n-h 4/12 doc id 16382 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 0.1 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 10 a 0.135 0.165 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1800 115 1.1 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 310 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 20 a, v gs = 10 v, (see figure 15) - 60 8.5 30 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain -2.8 - ?
stw26nm60n-h electrical characteristics doc id 16382 rev 1 5/12 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 10 a r g =4.7 ? v gs = 10 v (see figure 14) - 13 25 85 50 - ns ns ns ns table 8. source drain diode symbol parameter test co nditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 20 80 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 20 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a, di/dt = 100 a/s v dd = 60 v (see figure 16) - 370 5.8 31.6 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 16) - 450 7.5 32.5 ns c a
electrical characteristics stw26nm60n-h 6/12 doc id 16382 rev 1 2.1 electrical characteri stics (curves) figure 2. safe operating area for to-247 figure 3. thermal impedance for to-247 figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain-source on resistance i d 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 10 am0 33 16v1 g f s 6.5 4.5 2.5 0.5 0 10 i d (a) ( s ) 5 20 8 .5 15 t j =150c t j =25c t j =-50c am0 33 1 8 v1 r d s (on) 0.1 3 0.12 0.11 0.1 0 10 i d (a) ( ? ) 5 15 0.14 0.15 0.16 i d =10a v g s =10v 20 am0 33 17v1
stw26nm60n-h electrical characteristics doc id 16382 rev 1 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized b vdss vs temperature v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =4 8 0v i d =20a 50 12 v d s v g s 60 am0 33 20v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am0 33 19v1 v g s (th) 1.0 0.9 0. 8 0.7 -50 0 t j (c) (norm) -25 1.1 75 25 50 100 am0 33 21v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.1 am0 33 22v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am0 33 24v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 am0 33 2 3 v1
test circuits stw26nm60n-h 8/12 doc id 16382 rev 1 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive wavefor m figure 19. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
stw26nm60n-h package mechanical data doc id 16382 rev 1 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data stw26nm60n-h 10/12 doc id 16382 rev 1 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
stw26nm60n-h revision history doc id 16382 rev 1 11/12 5 revision history table 9. document revision history date revision changes 06-oct-2009 1 first release
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